QT-4100 power device test system
Applicable to electrical parameter tests of SiC/Si MOSFET, IGBT, diode, triode, thyristor, solid-state discharge tube, three-terminal voltage regulator, optocoupler, etc. Provide a complete set of mature test solutions, fully support dynamic and static parameter tests such as DC, EAS, RGCG, thermal resistance, SW switch characteristics, short circuit, TRR, QG, etc. Realization of the merging of test data from multiple stations.
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Voltage and current limiting |
High-precision Rdon test |
Modular functionality |
Multi-station data merge |
| Type |
QT-4100 power device test system |
| Advantages |
One-click calibration, batch self-check to prevent mistakes Low RDON minimum test 0.2mR Voltage and current limiting protection Form filling process Supports extended EAS, LCR, thermal resistance, SW, TRR, QG Supports PAT function With SECS/GEM standard interface |
| Main Features |
• Meet the full parameter test process of SiC Mos/IGBT, support 100% online QA • DC specification: 2kV 200A, extended 8kV 2kA • AC specification: 1500V 600A short circuit 3000A stray Ls<30nH, protection<300ns • The first domestic company to realize multi-station merging data, and support test station merging • Industry recognized standard test solution |
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No. 16 Guangming Avenue, New Light Source Industry Base, Nanhai National High tech Zone, Foshan City, Guangdong Province, China |
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+86 757 83207313 (Sales) |
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+86 757 83208786 (Sales) |
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info@powertechsemi.com |
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